RIE
The equipment utilizes capacitively coupled plasma (ccp) discharge to dissociate process gas molecules entering the etching chambergenerating plasma. Some reactive species in the plasma react chemically with the exposed surface of the material to be etched. Meanwhile, underthe inluence of RF bias voltage, positive jons in the plasma physically bombard the surface of the material to be etched achieving the purpose of chemically and physically combined etching.
ICP
The equipment utilizes radio frequency (RF) antennas to generate high-density plasma in the discharge chamber through inductive coupling, The etching workbench simultaneously introduces RF bias voltage. Under the influence of RF bias voltage, the plasma vertically bombards the exposed surface of the material to be etched, and undergoes chemical reactions with the material surface, achieving the purpose of chemically and physically combined etching of the sample.
