2N5884: Lựa chọn hàng đầu tại United States (USA) Utsource Holding Company Limited

Mô tả

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	V_CE(o)	-	-	600	V
Emitter-Collector Voltage	V_EC(o)	-	-	600	V
Collector-Base Voltage	V_CB(o)	-	-	600	V
Base-Emitter Voltage	V_BE(sat)	-	1.8	2.5	V
Collector Current	I_C(max)	-	-	8	A
Base Current	I_B(max)	-	-	1.6	A
Power Dissipation	P_T(max)	-	-	130	W
Junction Temperature	T_J(op)	-	-	150	°C
Storage Temperature	T_STG	-55	-	150	°C
Transition Frequency	f_T	-	3	-	MHz

Handling:
- Handle with care to avoid mechanical damage.
- Use appropriate anti-static measures to prevent damage from electrostatic discharge (ESD).
Mounting:
- Ensure proper heat sinking to manage power dissipation and maintain junction temperature within safe limits.
- Follow recommended PCB layout guidelines to minimize inductive effects and improve thermal performance.
Biasing:
- Ensure that the base current is sufficient to fully saturate the transistor when used as a switch.
- For linear applications, bias the transistor to operate in the active region to avoid distortion.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Monitor the collector-emitter voltage and current to prevent overheating and potential damage.
Testing:
- Use a suitable multimeter or tester to verify the functionality of the transistor.
- Perform tests under controlled conditions to ensure accurate results.
Storage:
- Store in a dry, cool place away from direct sunlight and sources of heat.
- Keep in original packaging to protect from moisture and static electricity.

(For reference only)