Description
BUY BB201 https://www.utsource.net/itm/p/4269053.html
Low-voltage variable capacitance double diode
| Parameter |
Description |
| Part Number |
BB201 |
| Type |
Bipolar Junction Transistor (BJT) |
| Polarity |
NPN |
| Collector-Emitter Voltage (Vce) |
30 V |
| Emitter-Base Voltage (Veb) |
5 V |
| Collector Current (Ic) |
1 A |
| Power Dissipation (Ptot) |
625 mW at 25°C |
| Transition Frequency (ft) |
300 MHz |
| Storage Temperature Range |
-65°C to +150°C |
| Operating Temperature Range |
-65°C to +150°C |
| Package Type |
TO-92 |
Instructions:
- Handling Precautions: The BB201 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
- Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation limits.
- Soldering: Do not exceed soldering temperatures of 260°C for more than 10 seconds. Allow adequate cooling between soldering operations.
- Biasing: Proper biasing of the base-emitter junction is essential for stable operation. Refer to application notes for detailed biasing circuits.
- Testing: When testing, ensure that all voltage and current ratings are adhered to prevent damage to the transistor.
- Storage: Store in original packaging in a dry, cool place away from direct sunlight.
(For reference only)
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