Description
BUY BSC0909NS https://www.utsource.net/itm/p/4297039.html
n-Channel Power MOSFET
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Conditions |
| Drain-Source Voltage |
VDS |
-10 |
|
30 |
V |
|
| Gate-Source Voltage |
VGS |
-5 |
|
5 |
V |
|
| Continuous Drain Current |
ID |
|
9 |
|
A |
TC = 25°C |
| Pulse Drain Current |
IDM |
|
28 |
|
A |
tp = 10 μs, TC = 25°C |
| Power Dissipation |
PD |
|
|
64 |
W |
TC = 25°C |
| Junction Temperature |
Tj |
-55 |
|
175 |
°C |
|
| Storage Temperature |
Tstg |
-55 |
|
150 |
°C |
|
| Thermal Resistance |
RθJC |
|
0.5 |
|
°C/W |
Junction to Case |
Instructions for BSC0909NS:
- Handling Precautions: The device is sensitive to static electricity; use proper ESD protection during handling.
- Mounting: Ensure the mounting surface is flat and clean to ensure good thermal contact.
- Heat Sinking: For applications where the device will operate at high current or power levels, use an appropriate heat sink to maintain junction temperature within limits.
- Biasing: Apply gate-source voltage (VGS) carefully to avoid exceeding the maximum ratings. Typically, a VGS of 10V is used for full enhancement.
- Pulse Operation: When operating in pulse mode, ensure that pulse width and frequency do not exceed safe operating area (SOA) limits.
- Storage: Store in a dry environment and observe the storage temperature range to prevent damage.
- Testing: Before final assembly, test the device parameters to ensure they meet the specified values.
For detailed application notes and more specific guidelines, refer to the manufacturer's datasheet.
(For reference only)
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