S29GL064N90FFI020

S29GL064N90FFI020

Category: Elec-component Available (Qty:9999999)
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Description

BUY S29GL064N90FFI020 https://www.utsource.net/itm/p/6370427.html
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology

Parameter Description Value Unit
Memory Organization Total memory organized as 64M bits -
Data Width Data width per I/O 8/16 bits
VCC Supply Voltage Operating supply voltage range 2.7 to 3.6 V
VPP Supply Voltage Programming supply voltage Not required -
Standby Current Typical standby current at VCC = 3.0V 5 μA
Active Current Typical active current during read, VCC = 3.0V 30 mA
Access Time Typical access time from CE low 70 ns
Package Type Package style TSOP II-48 -
Operating Temperature Range Industrial temperature range -40 to +85 °C
Write Protection Software and hardware data protection Yes -
Endurance Typical endurance cycles per sector 100,000 -
Data Retention Guaranteed data retention 20 years

Instructions for Use:

  1. Power Supply: Ensure that the VCC supply voltage is within the specified range of 2.7V to 3.6V.
  2. Data Width Configuration: Configure the data bus width as either 8-bit or 16-bit depending on system requirements.
  3. Standby Mode: To minimize power consumption, place the device in standby mode when not actively reading data.
  4. Access Timing: Account for a typical access time of 70ns when designing timing diagrams for read operations.
  5. Temperature Considerations: Operate the device within the industrial temperature range of -40°C to +85°C to ensure reliable performance.
  6. Write Protection: Utilize both software and hardware write protection features to safeguard against accidental data corruption.
  7. Endurance Management: Be aware of the typical endurance of 100,000 write cycles per sector to manage data writes effectively.
  8. Data Retention: Ensure that data integrity is maintained over the guaranteed retention period of 20 years by adhering to recommended operating conditions.
(For reference only)

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