Description
BUY SMBJ100CA https://www.utsource.net/itm/p/6574071.html
TVS Diode
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Conditions |
| Reverse Breakdown Voltage |
VBR |
- |
100 |
- |
V |
IRR = 1mA |
| Maximum Clamping Voltage |
VC |
- |
152 |
- |
V |
IPP = 68.9A, tp = 8/20μs |
| Peak Pulse Current |
IPP |
- |
68.9 |
- |
A |
tp = 8/20μs |
| Reverse Leakage Current |
IR |
- |
1 |
- |
μA |
VR = 25V, TA = 25°C |
| Junction Capacitance |
CJ |
- |
470 |
- |
pF |
VR = 0V, f = 1MHz |
| Operating Junction Temperature |
TJ |
-55 |
- |
150 |
°C |
- |
| Storage Temperature Range |
TSTG |
-55 |
- |
150 |
°C |
- |
Instructions for Use:
- Mounting: Ensure proper heat dissipation by mounting the SMBJ100CA on a heatsink if necessary, especially in high-power applications.
- Polarity: Pay attention to the polarity when installing; incorrect installation can lead to device failure.
- Voltage Handling: Do not exceed the reverse breakdown voltage (VBR) of 100V under any circumstances to avoid damaging the component.
- Current Limitation: Keep peak pulse currents below 68.9A to prevent overheating and potential failure.
- Temperature Management: Operate within the specified junction temperature range (-55°C to 150°C) to ensure reliable performance.
- Storage: Store in a dry environment within the storage temperature range (-55°C to 150°C).
- Capacitance Consideration: Be aware of the junction capacitance (470pF) which may affect high-frequency circuit performance.
For detailed application-specific guidelines, refer to the manufacturer's datasheet or contact technical support.
(For reference only)
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