H11L1 DIP6 H11L1M
H11L1 DIP6 H11L1M

 

H11L1 DIP6 H11L1M

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Category: Available (Qty:9999999)
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Description

BUY H11L1 DIP6 H11L1M https://www.utsource.net/itm/p/11603799.html

Parameter Description Value
Package Type Housing Style DIP-6
Input Device Type Photodiode
Output Device Type Phototransistor (NPN)
Isolation Voltage VIO 5300 VRMS
Forward Current IF 20 mA (Max)
Peak Forward Surge Current IFSM 1 A (10 ms, single pulse)
Reverse Voltage VRR 5 V (Max)
Collector-Emitter Voltage VCEO 30 V (Max)
Collector Current IC 100 mA (Max)
Operating Temperature TA -40°C to 85°C
Storage Temperature TSTG -40°C to 125°C
CTR (Current Transfer Ratio) Min to Max 20% to 400%
Response Time tr and tf 10 μs (Typ)
Power Dissipation PD 150 mW (Max)

Instructions for Use:

  1. Mounting:

    • Ensure the device is mounted on a PCB with proper clearance to avoid short circuits.
    • Follow the recommended footprint and soldering profile for DIP-6 packages.

  2. Electrical Connections:

    • Connect the photodiode (input side) to the appropriate drive circuit, ensuring the forward current does not exceed 20 mA.
    • Connect the phototransistor (output side) to the load circuit, ensuring the collector-emitter voltage and collector current do not exceed their maximum ratings.

  3. Isolation:

    • The device provides electrical isolation up to 5300 VRMS. Ensure that the input and output circuits are designed to maintain this isolation.

  4. Temperature Considerations:

    • Operate the device within the specified temperature range (-40°C to 85°C) to ensure reliable performance.
    • Store the device in an environment within the storage temperature range (-40°C to 125°C).

  5. CTR (Current Transfer Ratio):

    • The CTR can vary widely (20% to 400%). Design the circuit to accommodate this range for consistent operation.

  6. Response Time:

    • The typical response time is 10 μs. Ensure the application can handle this delay if high-speed switching is required.

  7. Power Dissipation:

    • Do not exceed the maximum power dissipation of 150 mW to prevent overheating and potential damage to the device.

  8. Handling:

    • Handle the device with care to avoid mechanical stress or damage to the leads.
    • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).
(For reference only)

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