M25P40-VMN3TPB

M25P40-VMN3TPB

Category: Available (Qty:9999999)
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Description

BUY M25P40-VMN3TPB https://www.utsource.net/itm/p/8931946.html

Parameter Description Value Unit
Device Type Non-Volatile Memory Serial Flash -
Density Memory Size 4 Mbit (512 K x 8) -
Package Package Type 8-SOIC, 8-TSSOP, 8-WSON -
Operating Voltage (Vcc) Supply Voltage Range 2.7 to 3.6 V
Interface Communication Protocol SPI (Serial Peripheral Interface) -
Clock Frequency (fCLK) Maximum Clock Frequency 50 MHz
Programming Time Page Program Time (256 bytes) 3 ms
Erase Time Sector Erase Time (4 Kbytes) 300 ms
Erase Time Bulk Erase Time (512 Kbytes) 40 s
Endurance Write/Erase Cycles 100,000 -
Data Retention Minimum Data Retention 20 years
Temperature Range Industrial Temperature Range -40 to +85 °C
Storage Temperature Storage Temperature Range -65 to +150 °C
Standby Current (Typical) Standby Current (Vcc = 3.0V) 1 μA
Active Current (Typical) Active Current (fCLK = 50MHz, Vcc = 3.0V) 3 mA

Instructions for Use:

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.
    • Connect the Vcc pin to the positive power supply and GND pin to the ground.
  2. SPI Interface:

    • Connect the SPI pins as follows:
      • CS (Chip Select): Active low, must be driven low to select the device.
      • SCK (Serial Clock): Input clock signal from the master.
      • MOSI (Master Out Slave In): Data input from the master.
      • MISO (Master In Slave Out): Data output to the master.
  3. Initialization:

    • Before any operation, ensure the device is selected by pulling CS low.
    • Send the appropriate command sequence to initialize the device.
  4. Read Operations:

    • Use the Read Memory Command (03h) to read data from the memory.
    • Address the memory location and read the desired number of bytes.
  5. Write Operations:

    • Use the Write Enable Command (06h) to enable writing.
    • Use the Page Program Command (02h) to write data to the memory.
    • Ensure the address is aligned to the page boundary (256 bytes).
  6. Erase Operations:

    • Use the Write Enable Command (06h) to enable erasing.
    • Use the Sector Erase Command (20h) to erase a 4 Kbyte sector.
    • Use the Bulk Erase Command (60h) to erase the entire chip.
  7. Status Register:

    • Use the Read Status Register Command (05h) to check the status of the device.
    • The status register indicates whether the device is busy or ready for operations.
  8. Power Down:

    • To reduce power consumption, use the Deep Power Down Command (B9h).
    • To resume normal operation, send the Release from Deep Power Down Command (ABh).
  9. Handling:

    • Handle the device with care to avoid static damage.
    • Store the device in a dry and cool environment when not in use.
  10. Compliance:

    • Ensure the device complies with all relevant safety and regulatory standards for your application.
(For reference only)

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