MT29F16G08ABABAWP

MT29F16G08ABABAWP

Category: Elec-component Available (Qty:9999999)
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Description

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Parameter Description Value
Device Name NAND Flash Memory MT29F16G08ABABAWP
Density Storage Density 16Gb (2GB)
Organization Organization 16K x 8 I/O
Vcc Voltage Range Supply Voltage 2.7V to 3.6V
VccI Voltage Range Input Voltage 2.7V to 3.6V
Temperature Range Operating Temperature -40°C to +85°C
Package Type Package WSON-16 9x8 mm
Access Time Page Read Access Time 70 ns
Block Size Block Size 128KB
Page Size Page Size 2KB
ECC Requirement Error Correction Code Requirement 1 bit/512 bytes
Endurance Program/Erase Cycles 100,000 cycles
Data Retention Data Retention 10 years

Instructions:

  1. Power Supply: Ensure that the supply voltage (Vcc and VccI) is within the specified range of 2.7V to 3.6V.
  2. Operating Temperature: The device should be operated within a temperature range of -40°C to +85°C to ensure reliable performance.
  3. Initialization: Before performing any read or write operations, initialize the device according to the initialization sequence provided in the datasheet.
  4. Read Operation: To read data, use the page read command with an access time of 70 ns per page.
  5. Write Operation: Perform write operations using the program command, ensuring that each block can endure up to 100,000 program/erase cycles.
  6. Error Correction: Implement ECC (Error Correction Code) as required, typically 1 bit for every 512 bytes of data, to maintain data integrity.
  7. Handling: Handle the WSON-16 package carefully to avoid damage to pins and ensure proper soldering during installation.

For detailed specifications and additional commands, refer to the manufacturer’s datasheet.

(For reference only)

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