BUY FE100A9 https://www.utsource.net/itm/p/11896412.html
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Part Number | Full part identification | FE100A9 | - |
| Type | Device type | FET | - |
| Configuration | Channel configuration | Enhancement | - |
| VGS(th) | Gate-source threshold voltage | ±2.0 | V |
| IDSS | Zero gate voltage drain current | 0.1 | mA |
| RDS(on) | On-state resistance at VGS = 10V | 0.8 | Ω |
| VDS(max) | Maximum drain-to-source voltage | 50 | V |
| VGS(max) | Maximum gate-to-source voltage | ±20 | V |
| PD(max) | Maximum power dissipation | 0.4 | W |
| TJ | Junction temperature range | -55 to 150 | °C |
