Description
BUY MG200Q2YS9 https://www.utsource.net/itm/p/386478.html
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
| Parameter |
Description |
Value |
| Part Number |
Full part identification |
MG200Q2YS9 |
| Type |
Device type |
MOSFET |
| Configuration |
Channel configuration |
N-Channel |
| VDS (Drain-Source Volt) |
Maximum Drain-Source voltage |
200V |
| VGS (Gate-Source Volt) |
Maximum Gate-Source voltage |
±20V |
| ID (Continuous Current) |
Continuous Drain current |
9A |
| PD (Power Dissipation) |
Maximum power dissipation |
175W |
| RDS(on) |
On-state resistance at specified VGS and ID |
0.065Ω (at VGS=10V, ID=8A) |
| Package Type |
Housing type |
TO-247 |
| Operating Temperature |
Junction temperature range |
-55°C to +150°C |
Instructions for Use:
Installation:
- Ensure the device is mounted on a heatsink if operating near maximum power dissipation to maintain safe operating temperatures.
- Follow proper anti-static precautions when handling to prevent damage to the MOSFET.
Circuit Design:
- Ensure that the drain-source voltage does not exceed 200V to avoid breakdown.
- The gate-source voltage should be kept within ±20V to prevent gate oxide damage.
- For optimal performance, keep the operating junction temperature within the specified range (-55°C to +150°C).
Testing:
- Test the device in a controlled environment with appropriate current and voltage limits before integrating into final applications.
- Verify the RDS(on) value under operational conditions to ensure it matches expected performance.
Storage:
- Store in a dry, cool place away from direct sunlight and sources of heat.
- Keep devices in anti-static packaging until ready for use.
(For reference only)
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