SKD100/04
SKD100/04

 

SKD100/04

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Category: Available (Qty:9999999)
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Description

BUY SKD100/04 https://www.utsource.net/itm/p/271689.html
Power Bridge Rectifiers

Parameter Description
Part Number SKD100/04
Type Silicon Controlled Rectifier (SCR)
Maximum Repetitive Peak Off-State Voltage (V DRM ) 1000 V
Maximum RMS On-State Current (I T(RMS) ) 4 A
Maximum Gate Trigger Current (I GT ) 50 mA
Maximum Gate Trigger Voltage (V GT ) 2 V
Junction Temperature Range (T J ) -40°C to +125°C
Storage Temperature Range (T STG ) -55°C to +150°C

Instructions:

  1. Installation: Ensure the SCR is mounted on a suitable heat sink to maintain junction temperature within specified limits.
  2. Gate Triggering: Apply gate current greater than I GT for reliable triggering. Ensure gate voltage does not exceed V GT .
  3. Voltage Handling: Do not exceed the maximum repetitive peak off-state voltage (V DRM ) to prevent damage.
  4. Current Handling: Operate within the maximum RMS on-state current (I T(RMS) ) to avoid overheating.
  5. Temperature Management: Keep the device within the junction and storage temperature ranges to ensure reliability and longevity.
  6. Handling Precautions: Use appropriate ESD protection when handling the device to prevent damage from static electricity.
(For reference only)

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