Description
BUY MG75Q2YS43 https://www.utsource.net/itm/p/243635.html
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
| Parameter |
Description |
Value |
Unit |
| Part Number |
Device Identifier |
MG75Q2YS43 |
- |
| Type |
Component Type |
MOSFET |
- |
| Package |
Encapsulation Style |
TO-252 |
- |
| VDS |
Drain-Source Voltage |
75 |
V |
| ID |
Continuous Drain Current |
2 |
A |
| PD |
Power Dissipation |
0.8 |
W |
| RDS(on) |
On-State Resistance at 25°C |
0.16 |
Ω |
| Qg |
Total Gate Charge |
29 |
nC |
| VGS(th) |
Gate Threshold Voltage |
2.0 to 4.0 |
V |
| TJ |
Junction Temperature Range |
-55 to 150 |
°C |
Instructions:
- Handling: Use appropriate ESD (Electrostatic Discharge) protection when handling the MG75Q2YS43 to avoid damage.
- Mounting: Ensure proper mounting orientation and secure attachment according to the manufacturer’s guidelines for the TO-252 package.
- Soldering: Follow recommended soldering profiles to prevent thermal damage. Avoid excessive heat and duration during soldering.
- Testing: Before incorporating into a circuit, test the component using specified test conditions to ensure it meets performance criteria.
- Storage: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.
- Application: Suitable for applications requiring high efficiency and low on-resistance, such as power supplies, motor control, and switching circuits.
(For reference only)
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