Description
BUY BSM75GAL120D https://www.utsource.net/itm/p/2853.html
IGBT Power Module
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Conditions |
| Collector-Emitter Voltage |
V CESM |
- |
- |
1200 |
V |
|
| Emitter-Collector Voltage |
V CES |
- |
- |
1200 |
V |
|
| Gate-Emitter Voltage |
V GES |
- |
- |
±20 |
V |
|
| Continuous Collector Current |
I C |
- |
75 |
- |
A |
T C = 25°C |
| Pulse Collector Current |
I CM |
- |
300 |
- |
A |
t p = 10 μs, I G = 10 A |
| Power Dissipation |
P TOT |
- |
- |
250 |
W |
T C = 25°C |
| Junction Temperature |
T J |
- |
- |
175 |
°C |
|
| Storage Temperature |
T STG |
-55 |
- |
150 |
°C |
|
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Handle with care to avoid damage to the gate terminal.
Gate Drive Requirements:
- Apply gate voltage within the specified range to prevent damage.
- Ensure adequate current drive capability for reliable turn-on.
Operating Conditions:
- Do not exceed maximum ratings at any time.
- Operate within recommended thermal conditions to ensure longevity and performance.
Storage and Environment:
- Store in a dry environment within the storage temperature range.
- Protect from static electricity during handling.
Installation:
- Follow manufacturer guidelines for mounting torque and methods.
- Verify correct orientation before installation.
Testing:
- Use appropriate test equipment that can accurately measure high voltages and currents.
- Perform tests under controlled conditions to avoid overstressing the device.
Note: Always refer to the latest datasheet provided by the manufacturer for detailed specifications and updates.
(For reference only)
More detail about Utsource Holding Company Limited