BSM75GAL120D

BSM75GAL120D

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY BSM75GAL120D https://www.utsource.net/itm/p/2853.html
IGBT Power Module

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage V CESM - - 1200 V
Emitter-Collector Voltage V CES - - 1200 V
Gate-Emitter Voltage V GES - - ±20 V
Continuous Collector Current I C - 75 - A T C = 25°C
Pulse Collector Current I CM - 300 - A t p = 10 μs, I G = 10 A
Power Dissipation P TOT - - 250 W T C = 25°C
Junction Temperature T J - - 175 °C
Storage Temperature T STG -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Handle with care to avoid damage to the gate terminal.
  2. Gate Drive Requirements:

    • Apply gate voltage within the specified range to prevent damage.
    • Ensure adequate current drive capability for reliable turn-on.
  3. Operating Conditions:

    • Do not exceed maximum ratings at any time.
    • Operate within recommended thermal conditions to ensure longevity and performance.
  4. Storage and Environment:

    • Store in a dry environment within the storage temperature range.
    • Protect from static electricity during handling.
  5. Installation:

    • Follow manufacturer guidelines for mounting torque and methods.
    • Verify correct orientation before installation.
  6. Testing:

    • Use appropriate test equipment that can accurately measure high voltages and currents.
    • Perform tests under controlled conditions to avoid overstressing the device.

Note: Always refer to the latest datasheet provided by the manufacturer for detailed specifications and updates.

(For reference only)

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