Description
        BUY BSM75GAL120D  https://www.utsource.net/itm/p/2853.html
IGBT Power Module
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | 
| Collector-Emitter Voltage | V CESM | - | - | 1200 | V |  | 
| Emitter-Collector Voltage | V CES | - | - | 1200 | V |  | 
| Gate-Emitter Voltage | V GES | - | - | ±20 | V |  | 
| Continuous Collector Current | I C | - | 75 | - | A | T C = 25°C | 
| Pulse Collector Current | I CM | - | 300 | - | A | t p = 10 μs, I G = 10 A | 
| Power Dissipation | P TOT | - | - | 250 | W | T C = 25°C | 
| Junction Temperature | T J | - | - | 175 | °C |  | 
| Storage Temperature | T STG | -55 | - | 150 | °C |  | 
Instructions for Use:
- Mounting and Handling: - 
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Handle with care to avoid damage to the gate terminal.
 
- Gate Drive Requirements: - 
- Apply gate voltage within the specified range to prevent damage.
- Ensure adequate current drive capability for reliable turn-on.
 
- Operating Conditions: - 
- Do not exceed maximum ratings at any time.
- Operate within recommended thermal conditions to ensure longevity and performance.
 
- Storage and Environment: - 
- Store in a dry environment within the storage temperature range.
- Protect from static electricity during handling.
 
- Installation: - 
- Follow manufacturer guidelines for mounting torque and methods.
- Verify correct orientation before installation.
 
- Testing: - 
- Use appropriate test equipment that can accurately measure high voltages and currents.
- Perform tests under controlled conditions to avoid overstressing the device.
 
Note: Always refer to the latest datasheet provided by the manufacturer for detailed specifications and updates.
(For reference only)
        
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