BUY BSM75GAL120D https://www.utsource.net/itm/p/2853.html
IGBT Power Module
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | V CESM | - | - | 1200 | V | |
Emitter-Collector Voltage | V CES | - | - | 1200 | V | |
Gate-Emitter Voltage | V GES | - | - | ±20 | V | |
Continuous Collector Current | I C | - | 75 | - | A | T C = 25°C |
Pulse Collector Current | I CM | - | 300 | - | A | t p = 10 μs, I G = 10 A |
Power Dissipation | P TOT | - | - | 250 | W | T C = 25°C |
Junction Temperature | T J | - | - | 175 | °C | |
Storage Temperature | T STG | -55 | - | 150 | °C |
Mounting and Handling:
Gate Drive Requirements:
Operating Conditions:
Storage and Environment:
Installation:
Testing:
Note: Always refer to the latest datasheet provided by the manufacturer for detailed specifications and updates.
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