Q32361-20N: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Description	Value
Part Number	Full part identification	Q32361-20N
Type	Type of component	MOSFET
Technology	Technology used	N-channel
Package	Package type	TO-220
Vds (Drain-Source Voltage)	Maximum voltage between drain and source	60V
Id (Continuous Drain Current)	Continuous current through the drain	20A
Rds(on) (On-State Resistance)	Resistance when fully on at specified conditions	4.5 mΩ @ Vgs = 10V
Power Dissipation (Ptot)	Total power dissipation allowed	125W
Operating Temperature Range	Temperature range for operation	-55°C to +175°C
Gate Charge (Qg)	Charge required to turn on the device	98 nC
Input Capacitance (Ciss)	Capacitance between gate and source	1670 pF

Installation: Ensure that the component is installed in a well-ventilated area to facilitate heat dissipation, especially considering its power dissipation capabilities.
Handling: Handle with care to avoid damage to the leads or body. Use appropriate anti-static measures to prevent damage from ESD (Electrostatic Discharge).
Soldering: Follow recommended soldering profiles to ensure reliable connections without damaging the component. Avoid overheating during soldering.
Testing: Before final assembly, test the component using a compatible MOSFET tester to ensure it meets the specified parameters.
Application: Suitable for applications requiring high efficiency and low on-resistance, such as motor control, power supplies, and switching applications.

(For reference only)