APT20M11JVFR: Top Choice in United States (USA) Utsource Holding Company Limited

Description

BUY APT20M11JVFR https://www.utsource.net/itm/p/5158.html
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Parameter	Description	Value	Unit
Device Name	APT20M11JVFR
Type	MOSFET
Package	TO-252 (DPAK)
Drain Source Voltage	Maximum Drain to Source Voltage	200	V
Continuous Drain	Continuous Drain Current at TJ = 25°C	11.4	A
Pulse Drain Current	Pulse Drain Current	36	A
Gate Source Voltage	Maximum Gate to Source Voltage	±20	V
RDS(on)	On-Resistance at VGS = 10V, ID = 4.8A	0.078	Ω
Input Capacitance	Input Capacitance at VDS = 100V, VGS = 0V	1160	pF
Total Power Dissipation	Total Power Dissipation at TA = 25°C	2.9	W
Junction Temperature	Maximum Operating Junction Temperature	150	°C
Storage Temperature	Storage Temperature Range	-55 to 150	°C

Installation: Ensure the device is soldered correctly into the circuit board, paying attention to correct orientation and pin alignment.
Handling: Handle with care to avoid damage to the leads and body of the component.
Thermal Management: Adequate heat sinking may be required depending on the application to ensure the junction temperature does not exceed the maximum operating limit.
Voltage and Current Limits: Do not exceed the specified drain-source voltage or continuous/pulse drain current limits to prevent damage to the MOSFET.
Gate Drive: Ensure gate drive signals do not exceed the maximum gate-source voltage ratings.
Capacitance Consideration: Take input capacitance into account when designing switching circuits to optimize performance.
Storage Conditions: Store in a dry environment within the specified storage temperature range to maintain component integrity.

(For reference only)