Description
BUY PDT508 https://www.utsource.net/itm/p/3332.html
| Parameter |
Description |
Value |
| Part Number |
Device identifier |
PDT508 |
| Type |
Component type |
Photodiode |
| Material |
Semiconductor material |
Silicon |
| Spectral Range |
Wavelength range of sensitivity |
400 nm - 1100 nm |
| Peak Sensitivity |
Wavelength with highest sensitivity |
950 nm |
| Reverse Voltage |
Maximum reverse voltage |
5 V |
| Dark Current |
Current in the absence of light at room temp |
< 1 nA |
| Capacitance |
Junction capacitance |
2 pF |
| Response Time |
Time to respond to changes in light intensity |
1 μs |
| Operating Temp. |
Temperature range for operation |
-40°C to +85°C |
| Package |
Enclosure type |
TO-46 metal can |
Instructions:
- Installation: Ensure that the device is handled with care to avoid damage to the sensitive photodiode element. Use appropriate ESD protection measures.
- Biasing: Apply a reverse bias voltage not exceeding the specified maximum reverse voltage.
- Mounting: Secure the component using recommended mounting techniques suitable for the TO-46 package to ensure thermal and electrical connections are reliable.
- Operation: Operate within the specified temperature range to maintain performance characteristics. Avoid exposure to extreme temperatures or humidity.
- Testing: When testing the device, use a light source within the spectral range for accurate measurement of response. Ensure ambient light conditions are controlled to minimize interference.
- Storage: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.
(For reference only)
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