Description
BUY AOD452 D452 https://www.utsource.net/itm/p/8847863.html
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Description |
| Drain-Source On-Resistance |
RDS(on) |
- |
0.12 |
- |
Ω |
At VGS = 4.5V, ID = 4A |
| Gate-Source Voltage |
VGS(th) |
0.8 |
1.6 |
2.5 |
V |
Gate threshold voltage |
| Continuous Drain Current |
ID |
- |
- |
6.7 |
A |
At VGS = 10V, TJ = 25°C |
| Power Dissipation |
PD |
- |
- |
1.1 |
W |
At TC = 25°C |
| Junction Temperature |
TJ |
-55 |
- |
150 |
°C |
Operating junction temperature range |
Instructions for Use:
- Handling Precautions: The AOD452 D452 is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
- Mounting: Ensure proper mounting and alignment on the PCB to maintain thermal performance and electrical connections.
- Heat Sinking: For applications requiring high current or continuous operation, consider using a heat sink to manage heat dissipation effectively.
- Voltage Limits: Do not exceed the maximum ratings provided in the table to avoid damage to the device.
- Gate Drive: Apply sufficient gate voltage to ensure the MOSFET operates within its specified RDS(on) parameters, enhancing efficiency and reducing power loss.
- Storage Conditions: Store in a dry environment and follow the recommended storage conditions to prevent degradation of device characteristics.
(For reference only)
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