BUY IPA80R1K0CE 8R1K0CE https://www.utsource.net/itm/p/8944588.html
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | - | 12 | - | A | @ Tc = 25°C, VGS = 10V |
| Pulse Drain Current | Isp | - | 36 | - | A | @ Tc = 25°C, VGS = 10V, t = 100 μs, Duty Cycle = 1% |
| Gate-Source Voltage | VGS | -10 | - | 15 | V | |
| Drain-Source Breakdown Voltage | VDS | - | 800 | - | V | @ ID = 250 μA, IG = 0 μA |
| On-State Resistance | RDS(on) | - | 1.0 | - | mΩ | @ VGS = 10V, ID = 12A, Tc = 25°C |
| Total Gate Charge | QG | - | 174 | - | nC | @ VDS = 600V, ID = 12A, VGS = 15V |
| Input Capacitance | Ciss | - | 2940 | - | pF | @ VDS = 600V, f = 1 MHz |
| Output Capacitance | Coss | - | 200 | - | pF | @ VDS = 600V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 2740 | - | pF | @ VDS = 600V, f = 1 MHz |
| Junction Temperature | TJ | -55 | - | 175 | °C | |
| Storage Temperature | Tstg | -55 | - | 150 | °C |
Power Dissipation Management:
Gate Drive:
Current Handling:
Voltage Ratings:
Thermal Management:
Capacitance Considerations:
Storage and Handling: