IPA80R1K0CE 8R1K0CE

IPA80R1K0CE 8R1K0CE

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY IPA80R1K0CE 8R1K0CE https://www.utsource.net/itm/p/8944588.html

Parameter Symbol Min Typical Max Unit Conditions
Continuous Drain Current ID - 12 - A @ Tc = 25°C, VGS = 10V
Pulse Drain Current Isp - 36 - A @ Tc = 25°C, VGS = 10V, t = 100 μs, Duty Cycle = 1%
Gate-Source Voltage VGS -10 - 15 V
Drain-Source Breakdown Voltage VDS - 800 - V @ ID = 250 μA, IG = 0 μA
On-State Resistance RDS(on) - 1.0 - @ VGS = 10V, ID = 12A, Tc = 25°C
Total Gate Charge QG - 174 - nC @ VDS = 600V, ID = 12A, VGS = 15V
Input Capacitance Ciss - 2940 - pF @ VDS = 600V, f = 1 MHz
Output Capacitance Coss - 200 - pF @ VDS = 600V, f = 1 MHz
Reverse Transfer Capacitance Crss - 2740 - pF @ VDS = 600V, f = 1 MHz
Junction Temperature TJ -55 - 175 °C
Storage Temperature Tstg -55 - 150 °C

Instructions:

  1. Power Dissipation Management:

    • Ensure that the power dissipation (Ptot) does not exceed the maximum allowable value for the device.
    • Use appropriate heatsinking to manage the junction temperature (TJ).
  2. Gate Drive:

    • Apply a gate-source voltage (VGS) within the specified range to avoid damage to the device.
    • Use a gate resistor to control the switching speed and reduce ringing.
  3. Current Handling:

    • Do not exceed the continuous drain current (ID) or pulse drain current (Isp) ratings.
    • For pulse applications, ensure that the duty cycle and pulse width are within the specified limits.
  4. Voltage Ratings:

    • Ensure that the drain-source voltage (VDS) does not exceed the breakdown voltage.
    • Avoid applying excessive reverse voltage to the gate-source (VGS).
  5. Thermal Management:

    • Monitor the junction temperature (TJ) to prevent thermal runaway.
    • Use thermal simulation tools to design effective cooling solutions.
  6. Capacitance Considerations:

    • Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) when designing the circuit to minimize switching losses.
  7. Storage and Handling:

    • Store the device in a dry environment within the specified storage temperature range (Tstg).
    • Handle the device with care to avoid static discharge and mechanical damage.
(For reference only)

More detail about Utsource Holding Company Limited
Utsource Holding Company Limited
Utsource Holding Company Limited Electronic Component Wholesaler, IC Chip Distributor, IGBT Module Supplier in California, USA | Utsource Holding Company Limited