K5A50D TK5A50D TO-220F 5A 500V MOS

K5A50D TK5A50D TO-220F 5A 500V MOS

Category: Available (Qty:9999999)
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Description

BUY K5A50D TK5A50D TO-220F 5A 500V MOS https://www.utsource.net/itm/p/8975852.html

Parameter Symbol Value Unit
Maximum Drain Current ID(MAX) 5 A
Drain-Source Breakdown Voltage V(BR)DSS 500 V
Gate-Source Voltage VGS ±20 V
Maximum Power Dissipation PD(MAX) 100 W
Junction Temperature TJ -55 to +175 °C
Storage Temperature TSTG -65 to +150 °C
Total Gate Charge QG 140 nC
Input Capacitance Ciss 2800 pF
Output Capacitance Coss 350 pF
Reverse Transfer Capacitance Crss 450 pF
On-State Resistance RDS(on) 0.15 Ω
Turn-On Delay Time td(on) 60 ns
Rise Time tr 50 ns
Turn-Off Delay Time td(off) 35 ns
Fall Time tf 25 ns

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage the maximum power dissipation.
    • Use a thermal compound between the MOSFET and the heatsink to improve thermal conductivity.
  2. Electrical Connections:

    • Connect the drain (D) to the high-voltage side of the circuit.
    • Connect the source (S) to the low-voltage side or ground.
    • Apply the gate (G) voltage relative to the source to control the MOSFET.
  3. Gate Drive:

    • Apply a gate-source voltage (VGS) within the specified range (±20V) to turn the MOSFET on or off.
    • Ensure the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it stays within the safe operating range (-55°C to +175°C).
    • Use a heatsink with adequate surface area and thermal conductivity to dissipate heat effectively.
  5. Storage:

    • Store the MOSFET in a dry, cool environment within the storage temperature range (-65°C to +150°C).
  6. Handling:

    • Handle the MOSFET with care to avoid damage to the leads and the body.
    • Use appropriate ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
  7. Testing:

    • Test the MOSFET in a controlled environment to verify its parameters and performance before integrating it into the final application.
  8. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Use protective equipment such as gloves and goggles when necessary.
(For reference only)

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