IRFP350 16A400V IRFP350PBF TO247

IRFP350 16A400V IRFP350PBF TO247

Category: Available (Qty:9999999)
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Description

BUY IRFP350 16A400V IRFP350PBF TO247 https://www.utsource.net/itm/p/8975882.html

Parameter Symbol Min Typical Max Unit Condition
Drain-Source Voltage VDSS - 400 - V @ ID = 0, TJ = 25°C
Gate-Source Voltage VGSS -20 - 20 V @ IG = ±1 mA, TA = 25°C
Continuous Drain Current ID - 16 - A @ VDS = 400 V, TC = 25°C
Pulse Drain Current ID(p) - 48 - A @ VDS = 400 V, tp = 10 ms, TC = 25°C
Gate Charge QG - 190 - nC @ VGS = 15 V, ID = 16 A
Input Capacitance Ciss - 2200 - pF @ VDS = 400 V, f = 1 MHz
Output Capacitance Coss - 1200 - pF @ VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 750 - pF @ VDS = 400 V, f = 1 MHz
Total Gate Charge QGT - 250 - nC @ VGS = 15 V, ID = 16 A
Turn-On Time ton - 1.5 - μs @ VGS = 15 V, ID = 16 A, RG = 10 Ω
Turn-Off Time toff - 2.5 - μs @ VGS = -15 V, ID = 16 A, RG = 10 Ω
Power Dissipation Ptot - - 240 W @ TC = 25°C
Junction Temperature TJ - - 175 °C -
Storage Temperature TSTG -55 - 150 °C -

Instructions for Use:

  1. Handling Precautions:

    • Avoid static discharge by using proper grounding and ESD protection.
    • Do not exceed the maximum ratings specified to prevent damage to the device.
  2. Mounting:

    • Ensure good thermal management by using a heatsink with adequate surface area and thermal paste.
    • Torque the mounting screws to the recommended specifications to ensure proper thermal contact.
  3. Biasing:

    • Apply the gate voltage (VGS) carefully to avoid exceeding the maximum gate-source voltage (VGSS).
    • Use a gate resistor (RG) to control the turn-on and turn-off times and reduce switching losses.
  4. Operating Conditions:

    • Monitor the junction temperature (TJ) to ensure it remains within safe limits.
    • Use appropriate cooling methods to maintain the device within its operating temperature range.
  5. Testing:

    • Perform initial testing at reduced power levels to verify proper operation.
    • Use a current-limiting resistor during testing to protect the device from overcurrent conditions.
  6. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Keep the device in its original packaging until ready for use to minimize exposure to static electricity.
(For reference only)

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