SVF12N60F

SVF12N60F

Category: Available (Qty:9999999)
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Description

BUY SVF12N60F https://www.utsource.net/itm/p/9494362.html

Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - - 600 V @ TJ = 25°C
Gate-Source Voltage VGS -15 - 15 V
Continuous Drain Current ID - - 12 A @ TC = 25°C
Pulse Drain Current IDM - - 36 A @ TC = 25°C, tp = 10 μs
Total Power Dissipation PTOT - - 180 W @ TC = 25°C
Junction Temperature TJ - - 150 °C
Storage Temperature TSTG -55 - 150 °C
Thermal Resistance, Junction to Case RθJC - 0.8 - °C/W
Input Capacitance Ciss - 1400 - pF @ VDS = 300V, f = 1 MHz
Output Capacitance Coss - 70 - pF @ VDS = 300V, f = 1 MHz
Reverse Transfer Capacitance Crss - 280 - pF @ VDS = 300V, f = 1 MHz
Turn-On Delay Time td(on) - 12 - ns @ ID = 12A, VGS = 10V, RG = 1Ω
Rise Time tr - 20 - ns @ ID = 12A, VGS = 10V, RG = 1Ω
Turn-Off Delay Time td(off) - 22 - ns @ ID = 12A, VGS = 10V, RG = 1Ω
Fall Time tf - 35 - ns @ ID = 12A, VGS = 10V, RG = 1Ω

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the device to temperatures outside the specified storage temperature range.
    • Handle with care to prevent mechanical damage or static discharge.
  2. Mounting:

    • Ensure proper thermal management to keep the junction temperature within the specified limits.
    • Use appropriate heatsinks or cooling methods to dissipate heat effectively.
  3. Biasing:

    • Apply gate-source voltage (VGS) within the specified range to avoid damaging the device.
    • Ensure the drain-source voltage (VDS) does not exceed the maximum rating.
  4. Current Handling:

    • Do not exceed the continuous drain current (ID) or pulse drain current (IDM) ratings.
    • For high-current applications, consider using multiple devices in parallel or a higher-rated device.
  5. Switching Characteristics:

    • Optimize gate resistance (RG) to balance switching speed and power dissipation.
    • Monitor switching times (td(on), tr, td(off), tf) to ensure efficient operation.
  6. Capacitance Management:

    • Account for input (Ciss), output (Coss), and reverse transfer (Crss) capacitances in circuit design to minimize parasitic effects.
  7. Testing:

    • Use appropriate test equipment and conditions to verify performance parameters.
    • Refer to the datasheet for detailed test conditions and procedures.
(For reference only)

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