2SK3019 KN SOT523

2SK3019 KN SOT523

Category: Available (Qty:9999999)
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Description

BUY 2SK3019 KN SOT523 https://www.utsource.net/itm/p/9506942.html

Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDS -60 - - V -
Gate-Source Voltage VGS -15 - - V -
Continuous Drain Current ID - - 1.2 A TC = 25°C
Pulse Drain Current ID(P) - - 3.0 A tP = 10 μs, TC = 25°C
Gate Threshold Voltage VGS(th) 1.0 1.5 2.0 V ID = 0.25 mA
On-State Resistance RDS(on) - 0.85 - Ω VGS = 4.5 V, ID = 1.2 A
Input Capacitance Ciss - - 70 pF f = 1 MHz
Output Capacitance Coss - - 20 pF f = 1 MHz
Reverse Transfer Capacitance Crss - - 8 pF f = 1 MHz
Total Power Dissipation PTOT - - 0.5 W TC = 25°C
Junction Temperature TJ - - 150 °C -
Storage Temperature Range TSTG -55 - 150 °C -

Instructions for Use:

  1. Handling Precautions:

    • The 2SK3019 KN SOT523 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection.
    • Avoid exceeding the maximum ratings listed in the table to prevent damage.
  2. Mounting:

    • Ensure the device is securely mounted on a suitable PCB with appropriate soldering techniques.
    • Use a heat sink if necessary to manage thermal dissipation, especially when operating at high currents or in high ambient temperatures.
  3. Biasing:

    • Apply the gate-source voltage (VGS) carefully to ensure it remains within the specified range to avoid damaging the gate oxide.
    • The gate threshold voltage (VGS(th)) should be considered when designing the biasing circuit to ensure reliable turn-on and turn-off of the transistor.
  4. Operation:

    • The continuous drain current (ID) should not exceed 1.2 A to prevent overheating and potential failure.
    • For pulse applications, the pulse drain current (ID(P)) can go up to 3.0 A, but the pulse duration (tP) should be limited to 10 μs to avoid excessive heating.
  5. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
    • Consider the storage temperature range (TSTG) when storing the device, ensuring it is kept between -55°C and 150°C.
  6. Testing:

    • When testing the device, use the typical values provided as a reference to verify its performance.
    • Measure the on-state resistance (RDS(on)) under the specified conditions to ensure it meets the required specifications.
  7. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the device in its original packaging until ready for use to protect against static and physical damage.
(For reference only)

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