BUY MDF13N50 https://www.utsource.net/itm/p/11226118.html
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 500 | V | Maximum drain-to-source voltage |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | Maximum gate-to-source voltage |
| Continuous Drain Current | ID | - | 13 | - | A | Continuous drain current at TC = 25°C |
| Pulse Drain Current | IDpeak | - | 45 | - | A | Pulse drain current (tp = 10 μs) |
| Power Dissipation | PD | - | - | 130 | W | Maximum power dissipation |
| Junction Temperature | TJ | - | - | 175 | °C | Maximum junction temperature |
| Storage Temperature | TSTG | -65 | - | 150 | °C | Operating temperature range |
| Total Gate Charge | QG | - | 120 | - | nC | Total gate charge |
| Input Capacitance | Ciss | - | 1800 | - | pF | Input capacitance at VDS = 300 V |
| Output Capacitance | Coss | - | 300 | - | pF | Output capacitance at VDS = 300 V |
| Reverse Transfer Capacitance | Crss | - | 200 | - | pF | Reverse transfer capacitance at VDS = 300 V |
| On-State Resistance | RDS(on) | - | 0.18 | - | Ω | On-state resistance at VGS = 10 V, ID = 13 A |
| Threshold Voltage | VGS(th) | 2 | 4 | 6 | V | Gate threshold voltage |
Handling and Storage:
Mounting:
Biasing:
Operation:
Pulse Operation:
Capacitance Considerations:
Safety: