MTP75N05HD: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	V_DS	-	50	-	V
Gate-Source Voltage	V_GS	-15	-	15	V
Continuous Drain Current	I_D	-	75	-	A	T_C = 25°C
Pulse Drain Current	I_{D pul}	-	200	-	A	t_p = 10 μs, I_G = 10 A
Power Dissipation	P_TOT	-	340	-	W	T_C = 25°C
Junction Temperature	T_J	-	-	150	°C
Storage Temperature Range	T_STG	-55	-	150	°C
Thermal Resistance, Junction to Case	R_θJC	-	0.8	-	K/W
Total Gate Charge	Q_G	-	90	-	nC
Input Capacitance	C_iss	-	1450	-	pF	V_DS = 25 V, f = 1 MHz
Output Capacitance	C_oss	-	360	-	pF	V_DS = 25 V, f = 1 MHz
Reverse Transfer Capacitance	C_rss	-	150	-	pF	V_DS = 25 V, f = 1 MHz

Mounting:
- Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within safe limits.
- Use a flat, clean surface for mounting to ensure good thermal contact.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use short leads to minimize parasitic inductance and improve switching performance.
Gate Drive:
- Apply a gate voltage (V_GS) between 10 V and 15 V for optimal performance.
- Avoid applying voltages outside the specified range to prevent damage.
Thermal Management:
- Monitor the junction temperature (T_J) to ensure it does not exceed 150°C.
- Use appropriate cooling methods such as heatsinks or forced air cooling.
Storage:
- Store the device in a dry, cool place within the storage temperature range (-55°C to 150°C).
- Handle with care to avoid mechanical stress or damage to the terminals.
Pulse Operation:
- For pulse operation, ensure that the pulse duration (t_p) and current (I_{D pul}) do not exceed the specified limits to avoid overheating or damage.
Surge Protection:
- Consider using surge protection devices to protect against transient overvoltages and overcurrents.
Compliance:
- Ensure that the application complies with all relevant safety and regulatory standards.

(For reference only)