2SK1095，K1095: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	V_DS	-	-	300	V	Maximum drain-to-source voltage
Gate-Source Voltage	V_GS	-10	-	10	V	Maximum gate-to-source voltage
Continuous Drain Current	I_D	-	8	10	A	Maximum continuous drain current (at T_C = 25°C)
Pulsed Drain Current	I_{D pulsed}	-	16	20	A	Maximum pulsed drain current (t_p = 10 μs, f_c ≤ 100 Hz)
Power Dissipation	P_D	-	-	120	W	Maximum power dissipation (at T_C = 25°C)
Junction Temperature	T_J	-	-	175	°C	Maximum junction temperature
Storage Temperature	T_STG	-55	-	150	°C	Operating and storage temperature range
Input Capacitance	C_iss	-	240	-	pF	Input capacitance (at V_DS = 250 V, f = 1 MHz)
Output Capacitance	C_oss	-	50	-	pF	Output capacitance (at V_DS = 250 V, f = 1 MHz)
Reverse Transfer Capacitance	C_rss	-	15	-	pF	Reverse transfer capacitance (at V_DS = 250 V, f = 1 MHz)
On-State Resistance	R_DS(on)	-	0.5	0.7	Ω	On-state resistance (at V_GS = 10 V, I_D = 8 A)
Gate Charge	Q_G	-	35	-	nC	Total gate charge (at V_DS = 250 V, I_D = 8 A)

Handling Precautions:
- Handle the 2SK1095 with care to avoid damage to the pins and internal structure.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure that the mounting surface is flat and clean to ensure good thermal contact.
- Use a suitable heat sink to manage the power dissipation and keep the junction temperature within safe limits.
Biasing:
- Apply the gate-source voltage (V_GS) carefully to avoid exceeding the maximum ratings.
- Ensure that the gate drive circuitry is capable of providing the required gate charge (Q_G) to turn the device on and off efficiently.
Operation:
- Monitor the drain current (I_D) and power dissipation (P_D) to prevent overheating.
- Use appropriate snubber circuits if necessary to suppress voltage spikes during switching.
Storage:
- Store the 2SK1095 in a dry, cool place away from direct sunlight and sources of heat.
- Follow the recommended storage temperature range to avoid damage.
Testing:
- Use a suitable test setup to verify the device parameters before integrating it into the final application.
- Refer to the datasheet for detailed testing procedures and recommended test conditions.
Safety:
- Always follow safety guidelines when working with high voltages and currents.
- Ensure that the device is properly insulated and grounded to prevent electrical hazards.

(For reference only)