Description
BUY 1N4448HWT-7 https://www.utsource.net/itm/p/11274868.html
1N4448HWT-7 Switching Diodes 80V 250mA/0.25A SOD-523 marking T8 highspeed switch/high conductance
Parameter |
Symbol |
Min |
Typical |
Max |
Unit |
Peak Forward Current |
IFSM |
- |
1.0 |
- |
A |
Continuous Forward Current |
IF |
- |
300 |
- |
mA |
Reverse Voltage |
VR |
- |
100 |
- |
V |
Reverse Current |
IR |
- |
5 |
- |
μA |
Forward Voltage (IF=10mA) |
VF |
0.9 |
1.1 |
1.3 |
V |
Operating and Storage Temperature |
T_A |
-65 |
- |
150 |
°C |
Junction Temperature |
TJ |
-65 |
- |
150 |
°C |
Instructions for Use:
- Handling: The 1N4448HWT-7 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling the device.
- Mounting: Ensure that the device is mounted with adequate thermal management if it will be operating at high currents or in high ambient temperatures.
- Soldering: Use a soldering iron with a temperature not exceeding 300°C for a duration not exceeding 10 seconds. Avoid excessive heat which can damage the diode.
- Polarity: Ensure correct polarity during installation. The cathode (marked band) should be connected to the more positive side of the circuit.
- Derating: For continuous operation at temperatures above 25°C, derate the forward current by 1.5 mA per degree Celsius above 25°C.
- Storage: Store the diodes in a dry, cool place away from direct sunlight and sources of heat.
- Testing: When testing the diode, use a multimeter set to the diode test mode to check for proper forward and reverse characteristics.
(For reference only)
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