2SB736A

2SB736A

Category: Diodes Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY 2SB736A https://www.utsource.net/itm/p/11275611.html
2SB736A PNP transistors(BJT) -80V -300mA/-0.3A 100MHz 250~400 -600mV/-0.6V SOT-23/SC-59 marking B55 radio audio frequency amplifier

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCEO - - 100 V IC = 5mA, IB = 0mA
Emitter-Base Voltage VEBO - - 5 V IE = 50mA
Collector Current IC - - 100 mA VCE = 1V
Base Current IB - - 10 mA VBE = 1V
DC Current Gain hFE 100 300 800 - IC = 10mA, VCE = 5V
Transition Frequency fT - 250 - MHz IC = 10mA, VCE = 5V
Storage Temperature TSTG -55 - 150 °C -
Operating Temperature TA -55 - 150 °C -

Instructions for Use:

  1. Handling: Handle the 2SB736A with care to avoid damage. Use appropriate anti-static measures.
  2. Mounting: Ensure proper heat sinking if operating at high power levels to maintain junction temperature within safe limits.
  3. Biasing: Bias the transistor correctly to ensure stable operation. Refer to the typical operating conditions for guidance.
  4. Storage: Store the device in a dry, cool place to prevent moisture damage.
  5. Testing: When testing, use recommended test conditions to avoid exceeding maximum ratings.
  6. Soldering: Solder the device quickly to avoid overheating. Recommended soldering temperature is 260°C for no more than 10 seconds.
  7. Application: The 2SB736A is suitable for general-purpose switching and amplification applications. Ensure that the application does not exceed the specified maximum ratings.
(For reference only)

More detail about Utsource Holding Company Limited
Utsource Holding Company Limited
Utsource Holding Company Limited Electronic Component Wholesaler, IC Chip Distributor, IGBT Module Supplier in California, USA | Utsource Holding Company Limited