2SB798: Top Choice in United States (USA) Utsource Holding Company Limited

Description

BUY 2SB798 https://www.utsource.net/itm/p/11283730.html
2SB798 PNP transistors(BJT) -30V -1A 110MHz 90~180 -250mV/-0.25V SOT-89/SC-62 marking DM low collector saturation voltage

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Collector-Emitter Voltage	V_CE	-	50	-	V	-
Emitter-Base Voltage	V_EB	-	5	-	V	-
Collector Current	I_C	-	150	-	mA	-
Base Current	I_B	-	15	-	mA	-
Power Dissipation	P_T	-	350	-	mW	T_A = 25°C
Storage Temperature Range	T_STG	-55	-	150	°C	-
Operating Junction Temperature	T_J	-55	-	150	°C	-
DC Current Gain (h_FE)	h_FE	100	400	800	-	I_C = 10 mA, V_CE = 5 V
Transition Frequency	f_T	-	100	-	MHz	-

Instructions for Use:

Mounting: Ensure proper heat dissipation if operating near maximum power dissipation. Use a heatsink if necessary.
Biasing: Set the base current (I_B) to achieve the desired collector current (I_C) based on the DC current gain (h_FE).
Temperature Management: Operate within the specified temperature range to avoid damage. Monitor the junction temperature (T_J) to ensure it does not exceed 150°C.
Voltage Limits: Do not exceed the maximum collector-emitter voltage (V_CE) or emitter-base voltage (V_EB) to prevent breakdown.
Storage: Store the device in a dry, cool place within the storage temperature range (-55°C to 150°C) to maintain reliability.
Handling: Handle with care to avoid mechanical damage. Use appropriate ESD protection when handling to prevent electrostatic discharge damage.

(For reference only)

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