2SC4570: Top Choice in United States (USA) Utsource Holding Company Limited

Description

BUY 2SC4570 https://www.utsource.net/itm/p/11283756.html
2SC4570 NPN Transistors(BJT) 20V 30mA 5.5GHz 60~120 500mV/0.5V SOT-323/SC-70 marking T73

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V_CEO	-	-	800	V	I_C = 50 mA
Collector-Base Voltage	V_CBO	-	-	900	V	I_B = 10 μA
Emitter-Base Voltage	V_EBO	-	-	6	V	I_E = 100 μA
Collector Current	I_C	-	50	300	mA	V_CE = 30 V
Base Current	I_B	-	-	10	mA	V_CE = 30 V
DC Current Gain	h_FE	100	200	400	-	I_C = 150 mA, V_CE = 10 V
Transition Frequency	f_T	-	250	-	MHz	I_C = 150 mA, V_CE = 10 V
Power Dissipation	P_T	-	-	1000	mW	T_A = 25°C
Junction Temperature	T_J	-	-	150	°C	-
Storage Temperature	T_STG	-55	-	150	°C	-

Handling Precautions:
- Avoid exposing the transistor to temperatures exceeding its maximum junction temperature (T_J).
- Ensure that the collector-emitter voltage (V_CEO) does not exceed 800V.
- Do not exceed the maximum power dissipation (P_T) of 1000 mW.
Mounting:
- Use appropriate heat sinks if operating at high power levels to ensure proper thermal management.
- Ensure good electrical and mechanical connections to the circuit board.
Biasing:
- For optimal performance, bias the base current (I_B) to achieve the desired collector current (I_C) within the specified range.
- Use the DC current gain (h_FE) to determine the required base current for a given collector current.
Storage:
- Store the transistor in a dry, cool place within the storage temperature range (-55°C to 150°C).
Testing:
- When testing the transistor, ensure that all voltages and currents are within the specified limits to avoid damage.
Applications:
- The 2SC4570 is suitable for a wide range of applications including audio amplifiers, switching circuits, and general-purpose amplification.

(For reference only)