2SC3645S

2SC3645S

Category: Diodes Available (Qty:9999999)
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Description

BUY 2SC3645S https://www.utsource.net/itm/p/11284993.html
2SC3645S NPN Transistors(BJT) 120V 140mA/0.14A 150MHz 140~280 300mV/0.3V SOT-89/PCP marking CAS high voltage switch

Parameter Symbol Min Typical Max Unit Notes
Collector-Emitter Voltage VCEO - - 100 V
Collector-Base Voltage VCBO - - 120 V
Emitter-Base Voltage VEBO - - 5 V
Collector Current IC - - 1.5 A
Base Current IB - - 0.15 A
DC Current Gain hFE 100 300 700 -
Transition Frequency fT - 250 - MHz
Power Dissipation Ptot - - 10 W
Junction Temperature TJ -20 - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting: Ensure the transistor is mounted on a suitable heatsink if operating near its maximum power dissipation to prevent overheating.
  2. Biasing: Proper biasing is crucial to ensure the transistor operates within its safe operating area (SOA). Use appropriate base resistors to limit base current.
  3. Protection: Consider using reverse-biased diodes across the collector-emitter terminals to protect against voltage spikes in inductive load applications.
  4. Storage: Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.
  5. Handling: Handle the transistor with care to avoid damage to the leads and internal structure. Use anti-static precautions to prevent damage from electrostatic discharge (ESD).
  6. Testing: When testing the transistor, use a multimeter or a dedicated transistor tester to check for proper operation and avoid applying excessive voltages or currents that could damage the device.
(For reference only)

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