Description
BUY 2SC3645S https://www.utsource.net/itm/p/11284993.html
2SC3645S NPN Transistors(BJT) 120V 140mA/0.14A 150MHz 140~280 300mV/0.3V SOT-89/PCP marking CAS high voltage switch
| Parameter |
Symbol |
Min |
Typical |
Max |
Unit |
Notes |
| Collector-Emitter Voltage |
VCEO |
- |
- |
100 |
V |
|
| Collector-Base Voltage |
VCBO |
- |
- |
120 |
V |
|
| Emitter-Base Voltage |
VEBO |
- |
- |
5 |
V |
|
| Collector Current |
IC |
- |
- |
1.5 |
A |
|
| Base Current |
IB |
- |
- |
0.15 |
A |
|
| DC Current Gain |
hFE |
100 |
300 |
700 |
- |
|
| Transition Frequency |
fT |
- |
250 |
- |
MHz |
|
| Power Dissipation |
Ptot |
- |
- |
10 |
W |
|
| Junction Temperature |
TJ |
-20 |
- |
150 |
°C |
|
| Storage Temperature |
TSTG |
-55 |
- |
150 |
°C |
|
Instructions for Use:
- Mounting: Ensure the transistor is mounted on a suitable heatsink if operating near its maximum power dissipation to prevent overheating.
- Biasing: Proper biasing is crucial to ensure the transistor operates within its safe operating area (SOA). Use appropriate base resistors to limit base current.
- Protection: Consider using reverse-biased diodes across the collector-emitter terminals to protect against voltage spikes in inductive load applications.
- Storage: Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.
- Handling: Handle the transistor with care to avoid damage to the leads and internal structure. Use anti-static precautions to prevent damage from electrostatic discharge (ESD).
- Testing: When testing the transistor, use a multimeter or a dedicated transistor tester to check for proper operation and avoid applying excessive voltages or currents that could damage the device.
(For reference only)
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