Description
BUY 2SD1615 https://www.utsource.net/itm/p/11285021.html
2SD1615 NPN Transistors(BJT) 60V 1A 160MHz 300~600 150mV/0.15V SOT-89 marking GK
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Notes |
| Collector-Emitter Voltage |
VCEO |
- |
- |
80 |
V |
- |
| Collector-Base Voltage |
VCBO |
- |
- |
90 |
V |
- |
| Emitter-Base Voltage |
VEBO |
- |
- |
7 |
V |
- |
| Collector Current |
IC |
- |
- |
3 |
A |
- |
| Base Current |
IB |
- |
- |
0.3 |
A |
- |
| Power Dissipation |
PT |
- |
- |
65 |
W |
- |
| Junction Temperature |
TJ |
- |
- |
150 |
°C |
- |
| Storage Temperature |
TSTG |
-55 |
- |
150 |
°C |
- |
| Transition Frequency |
fT |
- |
300 |
- |
MHz |
- |
| Continuous Collector Current (TA = 25°C) |
IC(TA) |
- |
3 |
- |
A |
- |
| Continuous Collector Current (TC = 25°C) |
IC(TC) |
- |
4 |
- |
A |
- |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use recommended mounting torque for screws to avoid damage.
Biasing:
- Ensure base current is sufficient to keep the transistor in the desired operating region (saturation, active, or cutoff).
- Use appropriate biasing circuits to stabilize the operating point.
Power Dissipation:
- Calculate power dissipation to ensure it does not exceed the maximum rating.
- Consider derating for higher ambient temperatures.
Storage and Handling:
- Store in a dry, cool place away from direct sunlight.
- Handle with care to avoid mechanical stress and static discharge.
Testing:
- Use appropriate test equipment and procedures to verify parameters.
- Avoid exceeding maximum ratings during testing to prevent damage.
Application:
- Suitable for high-frequency switching and linear applications.
- Check the datasheet for detailed application notes and circuit examples.
(For reference only)
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