BUY SI2301BDS https://www.utsource.net/itm/p/11287142.html
SI2301BDS MOSFET P-Channel -20V -2.4A 0.080ohm SOT-23 marking L1
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -55 | 55 | V | Maximum voltage between drain and source | |
| Gate-Source Voltage | VGS | -8 | 8 | V | Maximum voltage between gate and source | |
| Continuous Drain Current | ID | 4.2 | A | Continuous current through the drain | ||
| Pulse Drain Current | ID(pulse) | 10 | A | Peak pulse current through the drain (tp = 100 μs) | ||
| Power Dissipation | PD | 2.1 | W | Maximum power dissipation at TA = 25°C | ||
| Junction Temperature | TJ | -40 | 150 | °C | Operating junction temperature range | |
| Storage Temperature | TSTG | -65 | 150 | °C | Temperature range for storage | |
| Thermal Resistance | RθJC | 35 | °C/W | Junction-to-case thermal resistance | ||
| Gate Charge | QG | 9.5 | nC | Total gate charge | ||
| Input Capacitance | Ciss | 300 | pF | Input capacitance at VDS = 10V | ||
| Output Capacitance | Coss | 40 | pF | Output capacitance at VDS = 10V | ||
| Reverse Transfer Capacitance | Crss | 12 | pF | Reverse transfer capacitance at VDS = 10V |
Handling and Storage:
Mounting:
Biasing:
Operating Conditions:
Testing:
Soldering:
Applications: