2SK160

2SK160

Category: Diodes Available (Qty:9999999)
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Description

BUY 2SK160 https://www.utsource.net/itm/p/11292016.html
2SK160 JFET N-Channel 30v 2~6mA SOT-23 marking K6 analog switch

Parameter Symbol Value Unit
Drain-Source Voltage VDS ±500 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current ID 100 mA
Pulse Drain Current ID(p) 300 mA
Transconductance gm 4 to 8 mS
Input Capacitance Ciss 2.5 pF
Output Capacitance Coss 1.0 pF
Reverse Transfer Capacitance Crss 0.25 pF
Power Dissipation PD 1500 mW
Junction Temperature TJ -65 to +175 °C
Storage Temperature TSTG -65 to +175 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking if operating at high power levels.
    • Use a thermal compound between the transistor and the heatsink for better thermal conductivity.
  2. Biasing:

    • Apply the gate voltage (VGS) carefully to avoid exceeding the maximum ratings.
    • Use a current-limiting resistor in series with the gate to prevent excessive gate current.
  3. Operation:

    • Operate within the specified drain-source voltage (VDS) and drain current (ID) limits.
    • Avoid operating the device at temperatures outside the specified junction temperature range (TJ).
  4. Storage:

    • Store the device in a dry, cool place away from direct sunlight and extreme temperatures.
    • Handle with care to avoid mechanical damage.
  5. Testing:

    • Use appropriate test equipment and ensure that all connections are secure and correct.
    • Test the device under controlled conditions to avoid damaging it.
  6. Handling:

    • Use ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
    • Avoid touching the leads or the body of the transistor directly with bare hands.
(For reference only)

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