Description
BUY 2SK160 https://www.utsource.net/itm/p/11292016.html
2SK160 JFET N-Channel 30v 2~6mA SOT-23 marking K6 analog switch
| Parameter |
Symbol |
Value |
Unit |
| Drain-Source Voltage |
VDS |
±500 |
V |
| Gate-Source Voltage |
VGS |
±30 |
V |
| Continuous Drain Current |
ID |
100 |
mA |
| Pulse Drain Current |
ID(p) |
300 |
mA |
| Transconductance |
gm |
4 to 8 |
mS |
| Input Capacitance |
Ciss |
2.5 |
pF |
| Output Capacitance |
Coss |
1.0 |
pF |
| Reverse Transfer Capacitance |
Crss |
0.25 |
pF |
| Power Dissipation |
PD |
1500 |
mW |
| Junction Temperature |
TJ |
-65 to +175 |
°C |
| Storage Temperature |
TSTG |
-65 to +175 |
°C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking if operating at high power levels.
- Use a thermal compound between the transistor and the heatsink for better thermal conductivity.
Biasing:
- Apply the gate voltage (VGS) carefully to avoid exceeding the maximum ratings.
- Use a current-limiting resistor in series with the gate to prevent excessive gate current.
Operation:
- Operate within the specified drain-source voltage (VDS) and drain current (ID) limits.
- Avoid operating the device at temperatures outside the specified junction temperature range (TJ).
Storage:
- Store the device in a dry, cool place away from direct sunlight and extreme temperatures.
- Handle with care to avoid mechanical damage.
Testing:
- Use appropriate test equipment and ensure that all connections are secure and correct.
- Test the device under controlled conditions to avoid damaging it.
Handling:
- Use ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
- Avoid touching the leads or the body of the transistor directly with bare hands.
(For reference only)
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