BUY IRF3710S https://www.utsource.net/itm/p/11531213.html
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 60 | - | V | Continuous |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | Continuous |
| Continuous Drain Current | ID | - | 4.2 | - | A | TC = 25°C, VGS = 10V |
| Pulse Drain Current | IDpeak | - | 20 | - | A | tp = 10ms, IG = 2A, TC = 25°C |
| Power Dissipation | PD | - | 115 | - | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | Continuous |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
| Thermal Resistance, Junction to Case | RθJC | - | 1.2 | - | °C/W | - |
| Input Capacitance | Ciss | - | 1800 | - | pF | VDS = 25V, f = 1MHz |
| Output Capacitance | Coss | - | 400 | - | pF | VDS = 25V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 300 | - | pF | VDS = 25V, f = 1MHz |
| Gate Charge | QG | - | 60 | - | nC | VGS = 10V, VDS = 25V, ID = 4.2A |
| Threshold Voltage | VGS(th) | 2 | 4 | 6 | V | ID = 250μA, TA = 25°C |
| On-State Resistance | RDS(on) | - | 0.065 | - | Ω | VGS = 10V, ID = 4.2A, TA = 25°C |
Handling and Storage:
Mounting:
Electrical Connections:
Operating Conditions:
Testing:
Protection:
By following these guidelines, you can ensure reliable and efficient operation of the IRF3710S MOSFET.
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