IRF3205S F3205S TO-263 MOS 55V/110A: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typical	Max	Unit
Drain-Source Voltage	V_DSS	-	55	-	V
Continuous Drain Current	I_D	-	110	-	A (at 25°C)
Gate-Source Voltage	V_GS	-10	0	20	V
Input Capacitance	C_iss	-	4780	-	pF
Output Capacitance	C_oss	-	290	-	pF
R_DS(on) at V_GS=10V	R_DS(on)	-	5.0	-	mΩ
R_DS(on) at V_GS=4.5V	R_DS(on)	-	7.0	-	mΩ
Total Gate Charge	Q_g	-	104	-	nC
Power Dissipation	P_TOT	-	175	-	W (at 25°C)
Junction Temperature	T_J	-	-	175	°C
Storage Temperature	T_STG	-55	-	150	°C

Handling Precautions:
- Handle the IRF3205S with care to avoid static damage.
- Use proper ESD protection when handling the device.
Mounting:
- Ensure good thermal management by using a heatsink if necessary.
- Apply thermal paste between the MOSFET and heatsink for better heat dissipation.
Biasing:
- Apply the gate-source voltage (V_GS) within the specified range (-10V to +20V).
- Ensure the gate is properly driven to minimize switching losses.
Current Limiting:
- Do not exceed the maximum continuous drain current (110A at 25°C).
- Consider derating the current for higher ambient temperatures.
Thermal Management:
- Monitor the junction temperature (T_J) to ensure it does not exceed 175°C.
- Use forced air cooling or a larger heatsink for high-power applications.
Storage:
- Store the device in a dry, cool place within the storage temperature range (-55°C to 150°C).
Testing:
- Test the device under controlled conditions to verify its performance.
- Use appropriate test equipment and follow safety guidelines.
Application Notes:
- Refer to the datasheet and application notes for detailed information on specific applications and circuit design considerations.

(For reference only)