1N4007 IN4007 1A/1200V DO-41

1N4007 IN4007 1A/1200V DO-41

Category: Diodes Available (Qty:9999999)
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Description

BUY 1N4007 IN4007 1A/1200V DO-41 https://www.utsource.net/itm/p/11533726.html

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 1200 V
Maximum RMS Voltage (VRMS) 850 V
Maximum Average Rectified Forward Current (IF(AV)) 1 A
Maximum Non-Repetitive Peak Surge Current (IFSM) 30 A
Maximum Operating Junction Temperature (TJ) 150 °C
Maximum Storage Temperature Range (TSTG) -65 to +150 °C
Reverse Recovery Time (trr) 30 μs
Forward Voltage Drop at IF = 1A (VF) 1.1 V
Leakage Current at VR = 400V (IR) 5 μA
Package Type DO-41 -

Instructions for Use:

  1. Mounting: Ensure the diode is securely mounted to prevent mechanical stress. Use appropriate heat sinks if operating near maximum current or temperature limits.
  2. Polarity: The cathode (positive) lead is typically marked with a band or other identifier. Ensure correct polarity to avoid damage.
  3. Surge Handling: The diode can handle surge currents up to 30A, but ensure these surges are non-repetitive to avoid overheating.
  4. Temperature Management: Operate within the specified temperature range to ensure reliable performance. Avoid exceeding the maximum junction temperature of 150°C.
  5. Storage: Store in a dry, cool environment within the temperature range of -65°C to +150°C.
  6. Handling: Handle with care to avoid damaging the leads or the diode itself. Use appropriate ESD protection to prevent static damage.
  7. Testing: Use a multimeter or diode tester to check for proper functionality before installation. Ensure the forward voltage drop is within the specified range.
  8. Circuit Design: Consider the reverse recovery time when designing circuits to avoid issues with high-frequency switching applications.
(For reference only)

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