2SC4536: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	V_CEO	-	-	100	V	I_C = 500 mA
Emitter-Base Voltage	V_EBO	-	-	5	V	I_EBO = 5 mA
Collector-Base Voltage	V_CBO	-	-	100	V	I_CBO = 100 μA
Collector Current	I_C	-	-	500	mA	V_CE = 10 V
Base Current	I_B	-	-	50	mA	V_BE = 1 V
DC Current Gain	h_FE	100	250	500	-	I_C = 50 mA, V_CE = 10 V
Transition Frequency	f_T	-	150	300	MHz	I_C = 50 mA, V_CE = 10 V
Storage Temperature	T_STG	-55	-	150	°C	-
Operating Temperature	T_OP	-55	-	150	°C	-
Power Dissipation	P_T	-	-	625	mW	T_A = 25 °C

Handling Precautions:
- Avoid exposing the transistor to temperatures outside the specified operating range.
- Handle with care to prevent static damage.
Mounting:
- Ensure proper heat sinking if the device is expected to dissipate significant power.
- Follow recommended soldering profiles to avoid thermal stress.
Biasing:
- Ensure that the base current (I_B) is sufficient to keep the transistor in the desired operating region (saturation, active, or cutoff).
- Use appropriate biasing circuits to maintain stability and prevent thermal runaway.
Testing:
- Test the transistor under controlled conditions to ensure it meets the specified parameters.
- Use a curve tracer or equivalent equipment to verify the characteristics.
Storage:
- Store the transistors in a dry, cool place away from direct sunlight.
- Keep in original packaging until ready for use to protect against static discharge.
Soldering:
- Solder at a temperature of 260°C for no more than 10 seconds.
- Allow the device to cool naturally after soldering to avoid thermal shock.
Application Notes:
- The 2SC4536 is suitable for general-purpose amplification and switching applications.
- For high-frequency applications, consider the transition frequency (f_T) to ensure adequate performance.

(For reference only)