KGF25N120KDA 25N120 KEC 25A 1200V

KGF25N120KDA 25N120 KEC 25A 1200V

Category: Available (Qty:9999999)
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Description

BUY KGF25N120KDA 25N120 KEC 25A 1200V https://www.utsource.net/itm/p/11553942.html

Parameter Symbol Min Typ Max Unit Description
Drain-Source On-State Resistance RDS(on) - 180 - mΩ @ VGS=10V, ID=25A Resistance when the MOSFET is fully on
Drain-Source Breakdown Voltage VDS(BR) - 1200 - V Maximum voltage that can be applied between drain and source without damaging the device
Gate-Source Threshold Voltage VGS(th) 3 4 5 V Minimum gate-to-source voltage required to start turning on the MOSFET
Continuous Drain Current ID - 25 - A Maximum continuous current that can flow through the drain to source
Pulse Drain Current (tp=10ms) IDm - 100 - A Maximum pulse current that can flow through the drain to source for a short duration
Total Power Dissipation PTOT - 250 - W Maximum power that can be dissipated by the device under specified conditions
Junction Temperature TJ - - 175 °C Maximum allowable temperature of the junction
Storage Temperature Range TSTG -55 - 150 °C Temperature range over which the device can be stored without damage
Operating Temperature Range TA -55 - 150 °C Ambient temperature range over which the device can operate reliably

Instructions:

  1. Handling and Storage:

    • Store the device in a dry, cool place.
    • Handle with care to avoid damage to the leads and body.
    • Use ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting:

    • Ensure proper heat sinking to manage the power dissipation.
    • Use recommended mounting torque for the screws to avoid mechanical stress.
    • Ensure good thermal contact between the device and the heatsink.
  3. Operation:

    • Do not exceed the maximum ratings listed in the table.
    • Ensure that the gate-source voltage (VGS) does not exceed the threshold voltage to prevent damage.
    • Operate within the specified temperature ranges to ensure reliable performance.
  4. Testing:

    • Use appropriate test equipment and methods to measure parameters.
    • Follow safety guidelines to prevent electrical shock and damage to the device.
  5. Soldering:

    • Use a soldering iron with a temperature-controlled tip.
    • Solder quickly to avoid overheating the device.
    • Allow the device to cool down before applying power.
  6. Troubleshooting:

    • If the device fails to operate correctly, check for proper connections and power supply.
    • Verify that the gate drive circuit is functioning correctly.
    • Check for any signs of physical damage or overheating.
(For reference only)

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