BUY KGF25N120KDA 25N120 KEC 25A 1200V https://www.utsource.net/itm/p/11553942.html
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source On-State Resistance | RDS(on) | - | 180 | - | mΩ @ VGS=10V, ID=25A | Resistance when the MOSFET is fully on |
| Drain-Source Breakdown Voltage | VDS(BR) | - | 1200 | - | V | Maximum voltage that can be applied between drain and source without damaging the device |
| Gate-Source Threshold Voltage | VGS(th) | 3 | 4 | 5 | V | Minimum gate-to-source voltage required to start turning on the MOSFET |
| Continuous Drain Current | ID | - | 25 | - | A | Maximum continuous current that can flow through the drain to source |
| Pulse Drain Current (tp=10ms) | IDm | - | 100 | - | A | Maximum pulse current that can flow through the drain to source for a short duration |
| Total Power Dissipation | PTOT | - | 250 | - | W | Maximum power that can be dissipated by the device under specified conditions |
| Junction Temperature | TJ | - | - | 175 | °C | Maximum allowable temperature of the junction |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | Temperature range over which the device can be stored without damage |
| Operating Temperature Range | TA | -55 | - | 150 | °C | Ambient temperature range over which the device can operate reliably |
Handling and Storage:
Mounting:
Operation:
Testing:
Soldering:
Troubleshooting: