Description
BUY FGA25N120 FGA25N120AND FGA25N120ANDTU CHINA ORIGINAL https://www.utsource.net/itm/p/11553985.html
| Parameter |
FGA25N120 |
FGA25N120AND |
FGA25N120ANDTU |
| Type |
N-Channel MOSFET |
N-Channel MOSFET |
N-Channel MOSFET |
| VDS (Max) (V) |
1200 |
1200 |
1200 |
| VGS (Max) (V) |
±20 |
±20 |
±20 |
| ID (Continuous) (A) |
25 |
25 |
25 |
| RDS(on) (Typ) (mΩ) |
350 |
350 |
350 |
| Power Dissipation (W) |
240 |
240 |
240 |
| Junction Temperature (°C) |
-55 to 150 |
-55 to 150 |
-55 to 150 |
| Package |
TO-247 |
TO-247 |
TO-247 |
| Lead Free |
Yes |
Yes |
Yes |
| RoHS Compliant |
Yes |
Yes |
Yes |
Instructions for Use:
Handling Precautions:
- Handle with care to avoid static damage.
- Use proper ESD protection equipment when handling the device.
Mounting:
- Ensure good thermal contact with a heatsink if operating at high power levels.
- Use a suitable thermal compound between the device and the heatsink to improve heat dissipation.
Electrical Connections:
- Connect the Drain (D), Source (S), and Gate (G) terminals correctly.
- Ensure that the VGS voltage does not exceed the maximum rating of ±20V.
- Use appropriate gate resistors to control switching speed and reduce electromagnetic interference (EMI).
Operating Conditions:
- Operate within the specified temperature range (-55°C to 150°C).
- Ensure that the continuous drain current (ID) does not exceed 25A.
- Monitor the power dissipation to stay within the 240W limit.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in original packaging until ready for use to prevent damage.
Testing:
- Test the device using a suitable MOSFET tester or multimeter to ensure it is functioning correctly before installation.
Disposal:
- Dispose of the device according to local regulations for electronic waste.
For more detailed information, refer to the datasheet provided by the manufacturer.
(For reference only)
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