FQA28N15 28N15 28A 150V MOS TO-3P: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	V_DS	-	-	150	V
Gate-Source Voltage	V_GS	-15	-	15	V
Continuous Drain Current	I_D	-	-	28	A
Pulse Drain Current (t_p = 10 ms, Duty Cycle = 1%)	I_D(pulse)	-	-	100	A
Gate Charge	Q_G	-	74	-	nC
Input Capacitance	C_iss	-	1600	-	pF
Output Capacitance	C_oss	-	280	-	pF
Total Power Dissipation (T_C = 25°C)	P_TOT	-	-	180	W
Junction Temperature	T_J	-	-	175	°C
Storage Temperature	T_STG	-55	-	150	°C

Handling Precautions:
- Handle the device with care to avoid damage.
- Use appropriate ESD protection measures to prevent static damage.
Mounting:
- Ensure proper thermal management by using a heatsink if necessary.
- Follow the recommended PCB layout guidelines for optimal performance.
Biasing:
- Apply the gate-source voltage (V_GS) within the specified limits to avoid damage.
- Ensure the drain-source voltage (V_DS) does not exceed the maximum rating.
Current Limiting:
- Do not exceed the continuous drain current (I_D) or pulse drain current (I_D(pulse)) ratings.
- Use current limiting resistors if required to protect the device.
Thermal Management:
- Monitor the junction temperature (T_J) to ensure it stays within safe operating limits.
- Use thermal paste and a heatsink to improve heat dissipation.
Storage:
- Store the device in a dry, cool place within the storage temperature range (T_STG).
Testing:
- Perform initial testing at low power levels to verify correct operation before applying full load.
- Use a multimeter or oscilloscope to check the device parameters during operation.
Troubleshooting:
- If the device fails, check for overvoltage, overcurrent, or overheating conditions.
- Replace any damaged components and retest the circuit.
Compliance:
- Ensure the device is used in compliance with all relevant safety and regulatory standards.

(For reference only)