FMV20N60S1HF,20N60S1

FMV20N60S1HF,20N60S1

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY FMV20N60S1HF,20N60S1 https://www.utsource.net/itm/p/11582304.html

Parameter Symbol Min Typical Max Unit Notes
Drain-Source Voltage VDS - 600 V
Gate-Source Voltage VGS -20 20 V
Continuous Drain Current ID - 20 20 A @ TC = 25°C
Pulse Drain Current ID(p) - 40 40 A @ TC = 25°C, tp = 10 μs, IG = 10 A
Power Dissipation PTOT - 210 W @ TC = 25°C
Junction Temperature TJ - 175 °C
Storage Temperature TSTG -55 150 °C
Gate Charge QG - 80 120 nC
Input Capacitance Ciss - 2300 3450 pF @ VDS = 400 V, f = 1 MHz
Output Capacitance Coss - 250 375 pF @ VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 300 450 pF @ VDS = 400 V, f = 1 MHz
On-State Resistance RDS(on) - 0.19 0.25 Ω @ VGS = 10 V, ID = 20 A, TC = 25°C
Threshold Voltage VGS(th) 2.0 4.0 6.0 V @ ID = 250 μA, TC = 25°C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper handling to avoid damage to the device.
    • Mount the device on a heatsink to manage heat dissipation effectively.
  2. Biasing:

    • Apply the gate-source voltage (VGS) within the specified limits to control the drain current (ID).
    • Use a gate resistor to limit the gate current and prevent oscillations.
  3. Thermal Management:

    • Ensure that the junction temperature (TJ) does not exceed 175°C.
    • Use thermal paste between the device and the heatsink to improve thermal conductivity.
  4. Pulse Operation:

    • For pulse operation, ensure that the pulse width and frequency do not exceed the maximum ratings.
    • Consider the thermal effects during pulse operation to avoid overheating.
  5. Storage:

    • Store the device in a dry environment with temperatures between -55°C and 150°C.
  6. Testing:

    • When testing the device, use appropriate test equipment and follow safety guidelines to avoid damage or injury.
  7. Electrostatic Discharge (ESD) Protection:

    • Handle the device with ESD protection measures to prevent damage from static electricity.
  8. Circuit Design:

    • Design the circuit to handle the maximum power dissipation (PTOT) and ensure adequate cooling.
    • Use bypass capacitors to stabilize the power supply and reduce noise.
(For reference only)

More detail about Utsource Holding Company Limited
Utsource Holding Company Limited
Utsource Holding Company Limited Electronic Component Wholesaler, IC Chip Distributor, IGBT Module Supplier in California, USA | Utsource Holding Company Limited