STP80PF55

STP80PF55

Category: Available (Qty:9999999)
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Description

BUY STP80PF55 https://www.utsource.net/itm/p/11582974.html

Parameter Symbol Min Typical Max Unit Condition
Drain-Source Voltage VDS -55 - 55 V Continuous
Gate-Source Voltage VGS -20 - 20 V Continuous
Continuous Drain Current ID - 80 - A @ TC = 25°C
Pulse Drain Current ID(p) - 160 - A @ TC = 25°C, tp = 10 μs, Duty Cycle 1%
Power Dissipation PD - - 170 W @ TC = 25°C
Junction Temperature TJ - - 150 °C
Storage Temperature Range Tstg -55 - 150 °C
Total Gate Charge QG - 140 - nC @ VDS = 500V, ID = 8A, VGS = 10V
Input Capacitance Ciss - 3300 - pF @ VDS = 500V, f = 1 MHz
Output Capacitance Coss - 1100 - pF @ VDS = 500V, f = 1 MHz
Reverse Transfer Capacitance Crss - 700 - pF @ VDS = 500V, f = 1 MHz
On-State Resistance RDS(on) - 0.085 - Ω @ VGS = 10V, ID = 8A
Gate Threshold Voltage VGS(th) 2.0 2.5 4.0 V @ ID = 250 μA
Maximum Gate Current (turn-on/turn-off) IGM - ±20 - A @ VDS = 500V, ID = 8A, VGS = 10V

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid damage to the pins.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting and Soldering:

    • Ensure the device is securely mounted on the PCB.
    • Follow recommended soldering profiles to prevent thermal damage.
    • Use a heat sink if necessary to manage power dissipation.
  3. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table.
    • Monitor the junction temperature to ensure it remains within safe limits.
    • Use appropriate cooling methods (e.g., heat sinks, fans) to maintain temperature within operational limits.
  4. Circuit Design:

    • Ensure the gate drive circuit can provide the necessary current to switch the device quickly.
    • Use suitable snubber circuits to protect against voltage spikes during switching.
    • Consider the parasitic inductances in the layout to minimize switching losses.
  5. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Follow recommended storage conditions to ensure long-term reliability.
  6. Testing:

    • Perform initial testing under controlled conditions to verify proper operation.
    • Use appropriate test equipment to measure key parameters such as VDS, ID, and RDS(on).
(For reference only)

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