2SA1738: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	Vceo	Ic = 0	-	-	60	V
Collector-Base Voltage	Vcbo	Ib = 0	-	-	70	V
Emitter-Base Voltage	Vebo	Ie = 5mA	-	-	6.0	V
Collector Current	Ic	Vce = 25V	-	10	-	A
Base Current	Ib	Vce = 25V, Ic = 1A	-	0.1	-	A
DC Current Gain	hFE	Ic = 1A	30	100	400	-
Transition Frequency	fT	Ic = 150mA	-	-	10	MHz
Power Dissipation	Ptot	Ta = 25°C	-	-	90	W
Junction Temperature	Tj		-55	-	150	°C
Storage Temperature	Tstg		-55	-	150	°C

Mounting and Handling:
- Handle the transistor carefully to avoid damage.
- Ensure proper heat sinking if operating near maximum power dissipation.
Biasing and Operation:
- Operate within specified voltage and current limits to prevent damage.
- For optimal performance, bias the base current according to the required collector current and desired gain.
Thermal Considerations:
- Monitor junction temperature to ensure it remains within operational limits.
- Use appropriate cooling methods (heat sinks, fans) if necessary.
Storage:
- Store in a dry, cool place away from direct sunlight and corrosive environments.
Testing:
- When testing, apply voltages and currents gradually to avoid exceeding ratings.
- Use protective equipment and follow safety guidelines when handling electrical components.
Applications:
- Suitable for general-purpose amplification and switching applications.
- Ideal for circuits requiring high gain and moderate power handling.

(For reference only)