1.0A SCHOTTKY BARRIER RECTIFIER
DESCRIPTION
The MBR150 employs the 1.0A Schottky Barrier principle in a large area metal−to−silicon power diode. , it uses UTC’s advancedState−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes, and polarity protection diodes.
FEATURES
* Low Reverse Current
* Low Stored Charge, Majority Carrier Conduction
* Low Power Loss/High Efficiency
* Highly Stable Oxide Passivated Junction
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