BUY BF1105R https://www.utsource.net/itm/p/4274290.html
N-channel dual-gate MOS-FETs
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Part Number | BF1105R | ||
| Type | Silicon Controlled Rectifier (SCR) | ||
| Maximum Repetitive Peak Off-State Voltage (VDRM) | Peak inverse voltage | 1100 | V |
| Maximum On-State Current (IT(RMS)) | RMS on-state current | 5 | A |
| Maximum Gate Trigger Current (IG(T)) | Gate trigger current | 0.5 | mA |
| Maximum Gate Trigger Voltage (VG(T)) | Gate trigger voltage | 1.5 | V |
| Junction Temperature (TJ) | Operating temperature | -40 to +125 | °C |
| Storage Temperature (TSTG) | Storage temperature | -55 to +150 | °C |
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