BF1105R

BF1105R

分类: Elec-component 当前有货 (数量:9999999)
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N-channel dual-gate MOS-FETs

Parameter Description Value Unit
Part Number BF1105R
Type Silicon Controlled Rectifier (SCR)
Maximum Repetitive Peak Off-State Voltage (VDRM) Peak inverse voltage 1100 V
Maximum On-State Current (IT(RMS)) RMS on-state current 5 A
Maximum Gate Trigger Current (IG(T)) Gate trigger current 0.5 mA
Maximum Gate Trigger Voltage (VG(T)) Gate trigger voltage 1.5 V
Junction Temperature (TJ) Operating temperature -40 to +125 °C
Storage Temperature (TSTG) Storage temperature -55 to +150 °C

Instructions for Use:

  1. Installation:

    • Ensure the BF1105R is installed in a well-ventilated area to prevent overheating.
    • Follow proper mounting guidelines to ensure good thermal contact and mechanical stability.
  2. Handling:

    • Handle with care to avoid damage to the SCR terminals.
    • Avoid exposure to excessive static electricity which can damage sensitive components.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the parameter table.
    • Operate within specified junction temperature limits to ensure reliable performance.
  4. Testing:

    • Use appropriate test equipment to verify the SCR's functionality before installation.
    • Perform regular maintenance checks to ensure continued reliability.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight and corrosive substances.
    • Keep in original packaging until ready for use to protect against physical damage.
  6. Safety:

    • Always disconnect power and discharge capacitors before servicing circuits containing the BF1105R.
    • Follow all safety guidelines provided by the manufacturer and local regulations.
(For reference only)

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