FJAF6810D: 马来西亚的首选 Utsource Holding Company Limited

详情

BUY FJAF6810D https://www.utsource.net/itm/p/6363607.html
NPN Triple Diffused Planar Silicon Transistor

Parameter	Description	Value	Unit
Part Number	Device Identifier	FJAF6810D
Type	Device Category	MOSFET
Package	Physical Housing	TO-252 (DPAK)
Drain Source Voltage	Maximum Voltage between Drain and Source	60	V
Continuous Drain Current	Maximum Continuous Current through Drain	3.4	A
Pulse Drain Current	Peak Pulse Current through Drain	17	A
Gate Source Voltage	Maximum Voltage between Gate and Source	±20	V
Rds(on)	On-State Resistance at specified conditions	10	mΩ
Gate Charge	Total Gate Charge at specified conditions	12.9	nC
Input Capacitance	Capacitance between Gate and Source	1330	pF
Operating Temperature	Junction Temperature Range	-55 to +150	°C

Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum current ratings to maintain junction temperature within specified limits.
Gate Drive: Apply gate voltage within the specified range to avoid damage. Ensure adequate drive strength to switch the MOSFET fully on or off.
Handling: Handle with care to prevent electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
Storage: Store in original packaging in a dry, cool place away from direct sunlight and sources of heat.
Installation: Follow manufacturer guidelines for PCB layout and soldering profiles to ensure reliable operation and prevent thermal stress.
Testing: Verify all connections post-installation. Test under controlled conditions before full deployment.

For detailed specifications and additional information, refer to the datasheet provided by the manufacturer.

(For reference only)