BD242C

Category: Elec-component Available (Qty:9999999)
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Description

BUY BD242C https://www.utsource.net/itm/p/12610467.html

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage VCEO IC = 0.5A, IB = 0 - - 80 V
Collector-Base Voltage VCBO IC = 0, IB = 0 - - 100 V
Emitter-Base Voltage VEBO IE = 5mA, IB = 0 - - 6 V
Collector Current IC Continuous - - 3 A
Power Dissipation PT TA = 25°C - - 65 W
Junction Temperature TJ - - - 150 °C
Storage Temperature TSTG - -55 - 150 °C
Thermal Resistance RθJC Junction to Case - - 2.5 °C/W

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the transistor is handled with care to avoid mechanical damage.
    • Use appropriate heat sinks if operating near maximum power dissipation to maintain junction temperature within safe limits.
  2. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) terminals correctly to avoid damage.
    • Ensure that the voltage and current ratings are not exceeded during operation.
  3. Thermal Management:

    • Monitor the junction temperature to ensure it does not exceed 150°C.
    • Use thermal paste between the transistor and heat sink for better thermal conductivity.
  4. Storage:

    • Store the transistor in a dry, cool place within the temperature range of -55°C to 150°C.
    • Avoid exposure to high humidity and corrosive environments.
  5. Testing:

    • Before installing the transistor in a circuit, test its parameters using a multimeter or transistor tester to ensure it meets the specified ratings.
  6. Safety Precautions:

    • Always use proper grounding and insulation to prevent electrical shocks.
    • Follow all relevant safety standards and guidelines when handling and testing the transistor.
(For reference only)

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