24NM65N.

24NM65N.

Category: Elec-component Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY 24NM65N. https://www.utsource.net/itm/p/12610471.html

Parameter Symbol Min Typ Max Unit Notes
Drain-Source Voltage VDS - - 650 V
Gate-Source Voltage VGS -10 - 20 V
Continuous Drain Current ID - 24 - A @ Tc = 25°C
Pulse Drain Current Ipp - 96 - A tp = 10 μs, Tc = 25°C
Power Dissipation PD - - 270 W @ Tc = 25°C
Junction Temperature TJ -55 - 175 °C
Storage Temperature TSTG -55 - 150 °C
Thermal Resistance RθJC - 0.75 - °C/W Case to Junction
Total Gate Charge Qg - 135 - nC @ VGS = 15V, IDS = 24A
Input Capacitance Ciss - 2800 - pF @ VDS = 650V, VGS = 0V
Output Capacitance Coss - 1300 - pF @ VDS = 650V, VGS = 0V
Reverse Transfer Capacitance Crss - 600 - pF @ VDS = 650V, VGS = 0V

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
    • Handle the device with care to avoid mechanical stress and static discharge.
  2. Electrical Connections:

    • Connect the drain (D) to the high-voltage side of the circuit.
    • Connect the source (S) to the low-voltage side or ground.
    • Apply the gate (G) voltage relative to the source (S) to control the device.
  3. Gate Drive:

    • Use a gate driver capable of providing the necessary current to charge and discharge the gate capacitance quickly.
    • Ensure the gate voltage is within the specified range to prevent damage to the device.
  4. Thermal Management:

    • Monitor the junction temperature and use appropriate cooling methods (e.g., heatsinks, fans) to keep it within safe limits.
    • Consider derating the power dissipation if operating at higher ambient temperatures.
  5. Overcurrent Protection:

    • Implement overcurrent protection to prevent damage from excessive current.
    • Use fast-acting fuses or current-limiting circuits.
  6. Storage and Transportation:

    • Store the device in a dry, cool environment away from direct sunlight.
    • Follow ESD (Electrostatic Discharge) precautions during handling and transportation.
  7. Testing:

    • Test the device under controlled conditions to ensure it meets the specified parameters.
    • Use appropriate test equipment and follow safety guidelines to avoid damage to the device or injury.
  8. Compliance:

    • Ensure that the device is used in compliance with all relevant safety and regulatory standards.
(For reference only)

More detail about Utsource Holding Company Limited
Utsource Holding Company Limited
Utsource Holding Company Limited Electronic Component Wholesaler, IC Chip Distributor, IGBT Module Supplier in California, USA | Utsource Holding Company Limited