Elec-component
FGP15N60UNDF
FGP15N60UNDF

 

FGP15N60UNDF

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Category: Elec-component Available (Qty:9999999)
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Description

BUY FGP15N60UNDF https://www.utsource.net/itm/p/12612310.html

Parameter Symbol Value Unit
Maximum Drain-to-Source Voltage VDS(max) 600 V
Maximum Gate-to-Source Voltage VGS(max) ±20 V
Continuous Drain Current (Tc = 25°C) ID(25°C) 15 A
Continuous Drain Current (Tc = 100°C) ID(100°C) 7 A
Pulse Drain Current (tp = 10 μs, IG = 10 A) ID(p) 45 A
Total Power Dissipation (Tc = 25°C) PTOT(25°C) 300 W
Total Power Dissipation (Tc = 100°C) PTOT(100°C) 150 W
Junction Temperature Range TJ -55 to +150 °C
Storage Temperature Range TSTG -55 to +150 °C
Thermal Resistance, Junction to Case RθJC 1.0 °C/W
Input Capacitance (VGS = 15 V, f = 1 MHz) Ciss 2200 pF
Output Capacitance (VDS = 15 V, VGS = 0 V, f = 1 MHz) Coss 180 pF
Gate Charge (VGS = 15 V, ID = 1 A) QG 90 nC

Instructions for Use:

  1. Handling Precautions:

    • Handle the FGP15N60UNDF with care to avoid damage to the leads and body.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.

  2. Mounting:

    • Ensure that the mounting surface is clean and free of contaminants.
    • Apply thermal paste or a thermal pad between the device and the heatsink to improve heat dissipation.
    • Secure the device using the appropriate mounting hardware to ensure good thermal contact and mechanical stability.

  3. Electrical Connections:

    • Connect the drain, source, and gate terminals correctly according to the circuit diagram.
    • Use short, low-inductance leads to minimize parasitic effects.
    • Ensure that the gate drive circuitry is designed to provide sufficient drive current and voltage to switch the MOSFET quickly and efficiently.

  4. Thermal Management:

    • Monitor the junction temperature to ensure it stays within the specified range.
    • Use a heatsink or cooling solution to dissipate heat effectively, especially during high-power operation.

  5. Operational Considerations:

    • Operate the device within its specified voltage and current ratings to avoid damage.
    • Ensure that the gate-to-source voltage does not exceed the maximum rating.
    • Use appropriate snubber circuits if necessary to protect against voltage spikes and ringing.

  6. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Keep the device in its original packaging until ready for use to protect it from physical damage and ESD.

  7. Testing:

    • Perform initial testing at low power levels to verify proper operation before increasing the load.
    • Use a multimeter or oscilloscope to check the continuity and functionality of the device.

By following these instructions, you can ensure reliable and efficient operation of the FGP15N60UNDF MOSFET.

(For reference only)

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